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www.irf.com 1 8/16/10 auirf7675m2tr AUIRF7675M2TR1 applicable directfet outline and substrate outline directfet power mosfet automotive grade directfet isometric hexfet ? is a registered trademark of international rectifier. description the auirf7675m2tr/tr1 combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet packaging platform to produce a best in class part for automotive class d audio amplifier applications. the directfet package i s compat- ible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convectio n soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfe t package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet power mosfet optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key class d audio amplifier performance factors such as efficiency, thd and emi. moreover the directfet packaging platform offers low paras itic inductance and resistance when compared to conventional wire bonded soic packages which improves emi performance by reducing th e voltage ringing that accompanies current transients. these features combine to make this mosfet a highly desirable component in automotive class d audio amplifier systems. ?
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5$5! $ 5 ? " 6$+2 + sb sc m2 m4 l4 l6 l8 v (br)dss 150v r ds(on) typ. 47m max. 56m r g (typical) 1.2 q g (typical) 21nc dd g s s absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 60 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r j-can junction-to-can ??? 3.3 r j-pcb junction-to-pcb mounted 1.4 ??? linear derating factor w/c -55 to + 175 0.3 4.4 45 90 max. 18 13 72 150 20 v see fig.18a, 18b, 15, 16 170 59 w 2.7 270 c

2 www.irf.com surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) notes through are on page 10 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 150 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.16 ??? v/c r ds(on) static drain-to-source on-resistance ??? 47 56 m v gs(th) gate threshold voltage 3.0 4.0 5.0 v v gs(th) / t j gate threshold voltage coefficient ??? -11 ??? mv/c gfs forward transconductance 16 ??? ??? s r g gate resistance ??? 1.2 5.0 i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic characteristics @ t j = 25c (unless otherwise stated) q g total gate charge ??? 21 32 q gs1 pre-vth gate-to-source charge ??? 5.2 ??? q gs2 post-vth gate-to-source charge ??? 1.6 ??? nc q gd gate-to-drain charge ??? 7.1 ??? q godr gate charge overdrive ??? 7.1 ??? see fig. 6 and 17 q sw switch charge (q gs2 + q gd ) ??? 8.7 ??? q oss output charge ??? 8.8 ??? nc t d(on) turn-on delay time ??? 10 ??? t r rise time ??? 13 ??? t d(off) turn-off delay time ??? 14 ??? ns t f fall time ??? 7.5 ??? c iss input capacitance ??? 1360 ??? c oss output capacitance ??? 190 ??? pf c rss reverse transfer capacitance ??? 41 ??? c oss output capacitance ??? 1210 ??? c oss output capacitance ??? 92 ??? diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 63 95 ns q rr reverse recovery charge ??? 180 270 nc ??? ??? 18 ??? ??? 72 i d = 11a v ds = 150v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 75v t j = 25c, i f = 11a, v dd = 25v di/dt = 100a/ s t j = 25c, i s = 11a, v gs = 0v showing the integral reverse p-n junction diode. v ds = v gs , i d = 100 a v ds = 150v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 11a v ds = 50v, i d = 11a v ds = 16v, v gs = 0v v dd = 75v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 11a mosfet symbol r g =6.8 v ds = 25v conditions v gs = 0v, v ds = 120v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz

www.irf.com 3 7 )! 5! ' $8#59 http://www.irf.com 77( :
( )3-3;! ;! < qualification information ? small can msl1, 260c qualification level automotive (per aec-q101) ?? comments: this product has passed an automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class hc4 (+/-1000v) aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/-400v) aec-q101-002 human body model class h1b (+/-1000v) aec-q101-001

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 5.0v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 5.0v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 40 60 80 100 120 140 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 11a t j = 25c t j = 125c 0 10 20 30 40 50 60 i d , drain current (a) 40 80 120 160 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v t j = 25c t j = 125c 3 4 5 6 7 8 9 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 11a v gs = 10v

www.irf.com 5 fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v gs = 0v 0 4 8 12 16 20 24 i d ,drain-to-source current (a) 0 10 20 30 40 50 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 4 8 1216202428 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = 11a 25 50 75 100 125 150 175 t c , case temperature (c) 0 4 8 12 16 20 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.5 3.5 4.5 5.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 250 a i d = 1.0ma i d = 1.0a

6 www.irf.com fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.2a 4.5a bottom 11a 0.1 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? ( sec ) 1.381063 0.007407 1.312033 0.039921 0.104573 2.1e-05 0.501388 0.000741 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci = i / ri ci= i / ri c c 4 4 r 4 r 4 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse)

www.irf.com 7 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l s 20k
1 0.1 % + - 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 11a

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please see an-1035 for directfet assembly details and stencil and substrate design recommendations g d s dd d s g = gate d = drain s = source

www.irf.com 9 directfet part marking

please see an-1035 for directfet assembly details and stencil and substrate design recommendations part number logo batch number date code line above the last character of the date code indicates "lead-free" "au" = gate and automotive marking code a b c d e f g h j k l r 0.003 0.047 0.094 0.156 0.032 0.018 0.024 max 0.250 0.201 0.02 1.10 2.30 3.85 0.78 0.35 0.58 min 6.25 4.80 0.08 1.20 2.40 3.95 0.82 0.45 0.62 max 6.35 5.05 0.001 0.090 0.043 0.152 0.031 0.023 0.014 min 0.189 0.246 metric imperial dimensions in/an/a 0.78 0.82 n/a n/a 0.032 0.031 m p 0.029 0.007 0.68 0.09 0.74 0.17 0.027 0.003 0.032 0.78 0.82 0.031 0.015 0.017 0.38 0.42

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tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as auirf7675m2tr). for 1000 parts on 7" reel, order AUIRF7675M2TR1 b c imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 d h g click on this section to link to the appropriate technical paper. click on this section to link to the directfet website.
surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.33mh, r g = 25 , i as = 11a. pulse width 400 s; duty cycle 2%.
used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at

www.irf.com 11 important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, custom- ers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ex- penses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applica- tions, ir will not be responsible for any failure to meet such requirements for technical support, please contact ir?s technical assistance center http://www .irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

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